Ion Implantation Consumables and Repair Parts for Axcelis^® Implanters

Ion Implantation consumables and machine maintenance and support for GSD: Classic^™, 80^™, 160^™, 200^™, 200E^™, 200E2^™, HE^™, HE3^™, VHE^™, III^™, Ultra^™, HC3^™, Optima^™: HD, MD, Paradigm^™

EATON NOVA/AXCELIS^® implanters are equipped with advanced monitoring systems that ensure precise control and real-time feedback during the implantation process. These monitors provide accurate measurements of beam current, dose, energy, and other relevant parameters, allowing for precise process control and optimization.

150mm and 200mm AXCELIS^® GSD^™ implanters provide a number of options for advanced production and development processes such as the capability to process medium current and high current implants in tools with advanced process cleanliness.

The GSD^™ platform is the industry benchmark for the longest manufactured and supported batch ion implanter. while providing incremental performance improvements with updated components for long-term sustainability. The GSD^™ series platform’s production relevance extends well into the future, delivering the highest reliability, serviceability and lowest cost of operations.

The NV GSD-HE^™ is an analog of hybrid implanters and offers enhanced energy performance, allowing for increased flexibility and productivity.

The NV 10-160^™ is designed to facilitate implantation for challenging devices, providing ultra-low energy capabilities and excellent dose control.

The NV 10-80^™ is a high-energy implanter that delivers high dose performance and superior uniformity.

The NV-GSD/VHE^™ is an evolutionary step from the NV-GSD/HE^™, the NV-GSD/VHE^™ is designed to support all applications covered by the NV-GSD/HE^™ in addition to research and development activities for epi-replacement, manufacturing of deep triple well structures, and production of deep implants for CCD devices. The NV-GSD/VHE^™ delivers beam currents of B+ in excess of 1 pmA at energies approaching 1.7 MeV, B++ to energies approaching 3 MeV and P+++ energies approaching 5 MeV. The beamline of the NV-GSD/VHE^™ is designed to be field upgradeable to further extend the energy ranges of all species, if required, to match future process requirements. The NV-GSD/VHE^™ employs components and subsystems including the source, injector and end station, which are identical to those of the production proven NV-GSD/HE^™. Like the NV-GSD/HE^™, the NV-GSD/VHE offers fully automated operation, high throughput, excellent medium current implanter process performance, excellent control over differential channeling, and unsurpassed beam purity.

The NV-GSD-HE3^™ is a high energy implanter, improving upon the design concepts of the industry-leading GSD/HE^™ series, and was developed in order to meet new and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE^™ in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE^™ while maintaining the same twin well and triple well process capability.

A new end station capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE^™ system, has been developed. An evolutionary beam line has been developed, including a new mass-analysis magnet, final energy magnet and resonators with increased voltage output and higher efficiency. The HE3 also incorporates the extended life source technology, designed to obtain high beam current and long source life for multiply charged ions.

Axcelis^® GSD/HE^™ and VHE^™ systems were designed to deliver exceptional productivity, lowest COO, and unmatched process flexibility. The tools provide the broadest range of ion implantation capability, from 10keV to 5MeV, to perform retrograde well, double well, triple well, channel and buried layer implants. Both systems utilize the production proven RF Linear Accelerator (LINAC) which delivers benchmark productivity, reliability and uptime performance.

Axcelis^® introduced the first RF LINAC based system in 1986, with the introduction of the NV-1000 high energy implanter. Since that time, the RF LINAC has become the industry standard for high energy implant technology. The product line also includes the Optima XE Series of single wafer systems as well as the Paradigm Series of multi wafer systems. Together, they represent the only complete high energy solution capable of addressing all traditional and emerging high energy application requirements.

The Axcelis^® GSD/HE^™ class of Ion Implanters uses a radio frequency (RF) linear accelerator (LINAC) to provide the final acceleration to the extracted ions. The process of recipe creation on this tool often requires the modification of LINAC datasets which specify the RF voltage amplitude and phase as well as the focusing quadrupole lens voltage of the 10 to 14 RF cavities and lens assemblies. LINAC datasets are uniquely specified by the ion species, ion charge, extraction voltage, final energy, and beam current. The creation of a new dataset for a new final energy can be difficult because a change to the amplitude or phase of any given resonator changes the interaction of the beam with all subsequent downstream resonators. LINAC datasets are often created which make inefficient use of the RF voltage, with phase and amplitude combinations which can result in both acceleration and deceleration at various stages in the LINAC. Poor datasets can result in poor beam transmission efficiency and shorten the life of RF amplifiers which are being driven at unnecessarily high RF voltages.

The Ultra is based on Axcelis^®‘s benchmark 2keV drift beam current performance, with patented beamline technology in a flexible range of beam currents from 4.5mA to 7.0mA, allowing users to select or upgrade beamlines based on their specific manufacturing needs and productivity goals. Other enhancements, such as shorter scheduled maintenance time and the inclusion of Axcelis^®‘s Eterna^™ extended-life source, improve overall cost of ownership.

Designed for simplicity and cost effectiveness, the Optima platform of implanters provides complete, extendible applications coverage, giving users maximum flexibility and capital efficiency. The Optima HD is the industry’s only implanter that addresses both traditional high dose implants as well as an expanding range of applications at the 65nm technology node and beyond, including molecular and hydrogen implants.

The Optima HD covers all traditional high dose implants while providing significant mid dose applications overlap. The Optima HD delivers precise implants using Axcelis^®‘s advanced spot beam technology, resulting in exceptional implant uniformity and repeatability. Axcelis^®‘s proprietary RadiusScan(TM) endstation further enhances productivity and enables the system to cover an extremely broad dose range.

Optima HDx high current implanter has achieved a new industry milestone in source life performance, by delivering over 500 hours of source life for carbon and germanium species independently.  The system combines revolutionary ion source technology, the Eterna ELS3, with SPECTRA^™ Solifex, an innovative, new gas delivery system designed for Axcelis^® by The Linde Group’s Gases Division.  Together, these technologies significantly extend source life for carbon and germanium applications, providing chipmakers increased system availability, higher overall productivity, and lower cost of consumables; all translating to a compelling cost of ownership advantage.

The Optima^™ HDx high current implanter provides solutions for device manufacturers highest dose requirements with the versatility and extendibility to provide solutions beyond today’s 2Xnm technology node. The emergence of higher‐dose and lower‐energy halo and source‐drain extension implants for 90 and 65‐nm nodes drove the design of Axcelis^®‘s Optima MD ion implanter.

The Optima^™ MD extends the proven process performance of traditional medium‐current implanters over an energy range of 1 keV to 250 keV for singly‐charged ion species with beam currents ranging from 1 pμA to 4800 pμA. The Optima^™ MD comprises a hybrid‐scan beamline architecture, a new endstation, and a new control system that offers the user more flexibility in data acquisition and statistical process control. The beamline has the capability to provide milliamp beam currents in the low energy (<5 keV) range.

The Optima^™ X provides a complete range of energy levels from 10keV to 4MeV. Its inherent flexibility and broad energy range allow a single tool to support chipmakers’ dynamic high energy requirements for DRAM, NAND and NOR FLASH, embedded memory and logic device manufacturing. The Optima^™ XE combines Axcelis^®‘s production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis^®‘s advanced spot beam ensures that all points across the wafer see the same beam at the same angle, resulting in exceptional process control and maximum yield.

With the Eterna ELS3 Axcelis^® leveraged its ion source technology expertise to deliver the industry’s next generation in source performance for the sub 2Xnm node. The Eterna ELS3 includes patent pending hardware and process improvements designed to extend source life by an unprecedented 500% improvement for Carbon, and a 500% improvement for Germanium applications. The system is available as an option on new Optima^™ HDx tools, as well as an upgrade to installed systems.